报告摘要

RF bandpass flter chips are widely applied in mobile communication terminals, laptops, and IoT devices. From 2G to 5G sub-6 GHz, the surface acoustic wave (SAW) and bulk acoustic wave (BAW) bandpass flter chips are dominant. However, SAW and BAW bandpass filter chips are preferred for applications with working frequencies below 6 GHz. At 5G millimeter-wave frequency bands, SAW and BAW flter chips suffer from large insertion loss in the passband, narrow passband bandwidth, and small stopband suppression level. Thus, it is urgent to research and develop millimeter-wave bandpass flter chips for 5G mobile terminals. In this talk, research status of millimeter-wave bandpass flter chips based on acoustic wave, PCB, LTCC, and IPD is presented firstly. Then, a novel solution of millimeter-wave bandpass flter chips based on lithium niobate is proposed. Finally, the outlook for future development of millimeter-wave bandpass flter chips is given.

个人简介

Qun Li received the B.S. degree from Southwest Petroleum University, Chengdu, China,in 2012, and the Ph.D. degree from the University of Electronic Science and Technology of China (UESTC), Chengdu, China, in 2018. 
   In 2017, he joined the Department of Electrical and Computer Engineering, Wayne State University, Detroit, Ml, USA, as a Research Scholar. From 2017 to 2018, he was a Research Scholar with the Department of Electrical and Computer Engineering, Rutgers University, New Brunswick, NJ, USA. From 2018 to 2020, he was a Post-Doctoral Researcher with UESTC. From 2020 to 2023, he was a Post-Doctoral Researcher with Sun Yat-sen University. From 2021 to 2022, he was a Visiting Fellow with City University of Hong Kong, Hong Kong, China. He is currently a Post-Doctoral Fellow with the Hong Kong University of Science and Technology, Hong Kong, China. His current research interests include electromagnetics, antennas, circuits, and systems. He is a senior member of IEEE.